🤖 AI Summary
This paper systematically investigates the performance trade-offs between Processing-in-Memory (PIM) and CXL-based PIM (CXL-PIM) architectures. It addresses the fundamental tension: conventional PIM incurs high explicit data movement overhead, whereas CXL-PIM offers a unified address space but suffers from elevated memory access latency. To resolve this, the authors propose an end-to-end evaluation methodology that integrates empirical measurements from real PIM hardware with trace-driven CXL channel modeling, enabling large-scale benchmarking across mainstream workloads. Their analysis reveals, for the first time, that the amortization effect of unified addressing on interconnect latency is dynamic—varying with dataset size and execution phase—and can cause performance inversion between the two architectures. Building on this, they quantitatively characterize the boundary conditions defining the performance crossover points. The findings provide principled, quantifiable guidance for near-memory system design and uncover a novel architectural design space.
📝 Abstract
Processing-in-memory (PIM) reduces data movement by executing near memory, but our large-scale characterization on real PIM hardware shows that end-to-end performance is often limited by disjoint host and device address spaces that force explicit staging transfers. In contrast, CXL-PIM provides a unified address space and cache-coherent access at the cost of higher access latency. These opposing interface models create workload-dependent tradeoffs that are not captured by small-scale studies. This work presents a side-by-side, large-scale comparison of PIM and CXL-PIM using measurements from real PIM hardware and trace-driven CXL modeling. We identify when unified-address access amortizes link latency enough to overcome transfer bottlenecks, and when tightly coupled PIM remains preferable. Our results reveal phase- and dataset-size regimes in which the relative ranking between the two architectures reverses, offering practical guidance for future near-memory system design.