🤖 AI Summary
Radiation-induced soft errors in nanoscale CMOS circuits are increasingly severe; conventional filtering techniques protect only input nodes, necessitating additional output-side hardening that incurs substantial area and power overhead. To address this, we propose the Output-Split C-element (OSC), the first design enabling coordinated hardening at both input and output terminals. Integrating OSC with clock gating and a high-speed path, we develop LOCO—a single-node upset (SNU) self-recovering latch. Compared to state-of-the-art SNU-hardened latches, LOCO reduces transistor count by 19%, power consumption by 63.58%, delay by 74%, and power-delay product (PDP) by 92%, while significantly enhancing PVT robustness.
📝 Abstract
As the CMOS technology enters nanometer scales, integrated circuits (ICs) become increasingly sensitive to radiation-induced soft errors, which can corrupt the state of storage elements and cause severe reliability issues. Many hardened designs have been proposed to mitigate soft errors by using filtering elements. However, existing filtering elements only protect their inputs against soft errors and leave their outputs unprotected. Therefore, additional filtering elements must be added to protect outputs, resulting in extra overhead. In this paper, we first propose a novel Output-Split C-element (OSC) to protect both its input and output nodes, and then a novel LOw-COst single-node-upset (SNU) self-resilient latch (LOCO) to use OSCs to achieve both soft error resilience and low overhead. The usage of OSCs effectively reduce the short-circuit current of the LOCO latch during switching activities. Furthermore, the usage of clock gating and high-speed path reduces power consumption and delay, respectively. Compared with state-of-the-art SNU-resilient hardened designs, the LOCO latch achieves 19% fewer transistors, 63.58% lower power, 74% less delay, and 92% lower power-delay-product (PDP) on average. In addition, the LOCO latch exhibits better stability under variations in PVT (Process, Voltage, and Temperature).