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Machine Learning: Hardware-aware MLIntelligent Robots: State EstimationSearch and Optimization: Sampling/Simulation-based Search
Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design
🤖 AI Summary
To address the degradation of SRAM reliability caused by alpha-particle-induced single-event upsets (SEUs), this work proposes a radiation-hardened SRAM cell based on gate-all-around field-effect transistors (GAA-FETs). Leveraging physics-based modeling of the maximum linear energy transfer (LET<sub>max</sub>) for alpha particles in Si/Si<sub>x</sub>Ge<sub>1−x</sub> heterostructures, we perform co-optimization using 3D Technology Computer-Aided Design (TCAD) and PHITS Monte Carlo simulations, and integrate a bottom-dielectric isolation (BDI) structure. This enables effective charge-collection suppression and enhanced upset threshold under sub-7-nm GAA technology. The design maintains functional stability even under worst-case vertical alpha-particle incidence, achieving complete SEU immunity without requiring additional error-correcting codes. Consequently, it significantly improves both radiation robustness and energy efficiency for high-reliability memory applications.
Technology Category
Application Category
📝 Abstract
In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design a static random-access memory (SRAM) using gate-all-around field-effect-transistor (GAA-FET) technology so that it is immune to single alpha particle radiation error. In other words, with the design, there will be no single-event upset (SEU) due to alpha particles. We first use ab initio calculations in PHITS to show that there is a maximum linear energy transfer (LET), LETmax, for the alpha particle in Si and Si$_x$Ge$_{1-x}$. Based on that, by designing a sub-7nm GAA-FET-based SRAM with bottom dielectric isolation (BDI), we show that the SRAM does not flip even if the particle strike is in the worst-case scenario.
Problem
Research questions and friction points this paper is trying to address.
Designing radiation-immune SRAM using GAA-FET technology
Preventing single-event upsets from alpha particle strikes
Achieving SEU immunity through sub-7nm BDI design
Innovation
Methods, ideas, or system contributions that make the work stand out.
3D TCAD simulations for radiation immunity
Sub-7nm GAA-FET with BDI design
Maximum LET-based alpha particle immunity
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